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A New Method for the Extraction of Diode Parameters Using a Single Exponential Model
Diode characteristic junction parameters linear correlation coefficient
2010/12/9
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (...
A Molecular-Orbital Model for Amorphous Group IV Semiconductors
A Molecular-Orbital Model Amorphous Group IV Semiconductors
2010/12/10
A theoretical model based on standard molecular-orbital theory and extended Hückel approach is proposed. This model is valid for amorphous group IV semiconductors and represents a substantial improvem...
An Algebraic Model for the Recombination Rate in Semiconductors
the electron-hole recombination rate semiconductors linear algebraic methods
2010/12/16
This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts intr...