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A household microwave oven modified by a Cornell Engineering professor is helping to cook up the next generation of cellphones, computers and other electronics after the invention was shown to overcom...
Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at the Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, to...
The road to more versatile wearable technology is dotted with iron. Specifically, quantum dots of iron arranged on boron nitride nanotubes (BNNTs). The new material is the subject of a study published...
Researchers from North Carolina State University have developed a new way to transfer thin semiconductor films, which are only one atom thick, onto arbitrary substrates, paving the way for flexible co...
Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors are investigated using nonlocal empirical pseudopotential method with spin-orb...
One of the great problems in physics is the detection of electromagnetic radiation – that is, light – which lies outside the small range of wavelengths that the human eye can see. Think X-rays, for ex...
One of the great problems in physics is the detection of electromagnetic radiation – that is, light – which lies outside the small range of wavelengths that the human eye can see. Think X-rays, for ex...
This work presents an inexpensive and easily manufacturable, highly conductive and transparent network electrode for textured semiconductors. It is based on lines of transformed into a network by micr...
Cd1−xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase wi...
Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is e...
A theoretical model based on standard molecular-orbital theory and extended Hückel approach is proposed. This model is valid for amorphous group IV semiconductors and represents a substantial improvem...
An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution in tetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. In a...
This article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical conside...
A special theoretical formulation on the magnetic susceptibility of tetrahedral amorphous semiconductors is proposed. This formulation is based upon a Wannier representation involving two terms: a dia...
The thermoelectric power and Hall effect of In2O3 single crystals, either undoped or Sn doped, and of In2O3 ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negativ...

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