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Hole Mobility in Strained Ge and III-V P-channel Inversion Layers with Self-consistent Valence Subband Structure and High-k Insulators
Ge and III-V high-k hole mobility k.p strained p-channel valence subband structure
2014/11/7
We present a comprehensive investigation of the low-ˉeld hole mobility in strained Ge and III-V (GaAs, GaSb, InSb and In1¡xGaxAs) p-channel inversion layers with both SiO2 and high-· insulators. ...
Recent Advances in Perfectly Matched Layers in Finite Element Applications
Finite element method (FEM) perfectly matched layer (PML) locally-conformal PML
2009/7/28
We present a comparative evaluation of two novel and practical perfectly matched layer (PML) implementations to the problem of mesh truncation in the finite element method (FEM): locally-conformal PML...
Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Metamorphic buffer layer LP-MOCVD HEMT
2010/12/7
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented ...