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成都电子科技大学基础与前沿研究院王志明教授团队在国际著名期刊Chemical Society Reviews发表综述论文（图）
成都电子科技大学基础与前沿研究院 王志明 Chemical Society Reviews 半导体纳米材料
2020/10/23
近日，电子科技大学基础与前沿研究院王志明教授团队在国际期刊《Chemical Society Reviews》（IF=42.8）发表题为“Organic-based inverters: basic concepts,materials, novel architectures and applications”的长篇综述论文。基础与前沿研究院博士后Tim Leydecker为论文第一作者，基础与...
近日，美国化学化工新闻期刊（C&EN）以“可用于长期监测健康信息的透气性电子器件”（“Breathable electronics could monitor our health long-term”）为题专题报道了我校材料科学与工程学院博士研究生周伟欣以第一作者在国际著名期刊ACS Nano发表的研究成果。周伟欣同学在我校一流学科建设国际交流专项基金的资助下于2018年至北卡罗莱纳州立大学进行...
Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System
Substrate Effect Plasma Clean Efficiency Plasma Chemical Vapor Deposition System
2010/12/6
The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable...
Fabrication of SOI Optical Waveguide Devices by Anisotropic Chemical Etching
rib waveguide multi-mode interference silicon-on-insulator anisotropic chemical etching
2010/7/16
In order to obtain smooth waveguide interface, thermo-optic (TO) variable optical attenuator (VOA) and 2×2 optical switch based on 3-dB multi-mode interferometer were fabricated using anisotropic chem...
Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
GaAs Anisotropic Chemical Etching TENSOSIM
2010/12/7
The analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution...
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
Silicon Anisotropic etching NaOH etchant Tensorial and kinematic model Simulator TENSOSIM
2010/12/7
The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of ...
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h l) Silicon Plates in a NaOH 35% Solution. Part II: 3D Etching Shapes, Analysis and Comparison with KOH 56%
the Chemical Etching (h k 0) and (h h l) Silicon Plates a NaOH 35% Solution KOH 56%
2010/12/8
This paper deals with the micromachining of various (h k 0) and (h h l) membrane–mesa structures in a NaOH 35% solution. Final etching shapes of micromachined structures show a marked anisotropy of ty...
Some Investigations on the Anisotropy of the Chemical Etching of (hk0) and (hhl) Silicon Plates in a NaOH 35% Solution. Part I: 2D Etching Shapes
Anisotropic etching Silicon NaoH etchant
2010/12/8
In this paper a study of the anisotropic dissolution of (hk0) and (hhl) silicon plates in a NaOH 35% solution is undertaken. Effects of orientation on firstly, the geometrical features of etched surfa...
Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH
Etching Silicon plates EDP solution
2010/12/8
This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting ...
Evaluation of Bonding Orbitals in Amorphous Silicon by Means of the Chemical Pseudopotential Method
Bonding Orbitals Amorphous Silicon the Chemical Pseudopotential Method
2010/12/15
The chemical pseudopotential method has been used by a number of workers in order to study the valence bands of amorphous tetrahedrally bonded semiconductors. However, various problems related to this...