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Hole Mobility in Strained Ge and III-V P-channel Inversion Layers with Self-consistent Valence Subband Structure and High-k Insulators
Ge and III-V high-k hole mobility k.p strained p-channel valence subband structure
2014/11/7
We present a comprehensive investigation of the low-ˉeld hole mobility in strained Ge and III-V (GaAs, GaSb, InSb and In1¡xGaxAs) p-channel inversion layers with both SiO2 and high-· insulators. ...
Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
MOS Transistor Surface roughness Effective mobility Series resistance
2010/12/8
The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enabl...