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Cornell engineers and materials scientists have added a state-of-the-art tool to their suite of laboratory equipment that has helped make the university a world leader in the study of gallium oxide, a...
Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications
Modeling analysis optical control gallium nitride ion dose ion energy ion range of parameters
2014/12/31
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception
Modeling gaas mesfets leakage current the drain-source voltage voltage current voltage characteristic
2014/12/31
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
Study of analytical determination of parasitic resistances in Gallium Nitride (GaN) MESFET'S
Analysis model gallium nitride metal semiconductor should the transistor drainage electrical parameters of the resistance
2014/12/31
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
Blue Light Emitting Device made of cubic phase gallium nitride
LED blue LDs GaN cubic phase GaAs
2010/7/15
A metastable cubic phase GaN blue light emitting device has been fabricated. It has
demonstrated the feasibility of growing device quality metastable cubic GaN films on GaAs
substrates. A very simpl...
A Study on the Transversal Optical Mode in Amorphous Gallium Arsenide
Far-infrared spectrum a-GaAs transversal optical mode dipole moment matrix element
2010/12/9
Contributions to the far-infrared spectrum corresponding to both dynamical and structural disorders in a-GaAs are examined when frequency coincides with the transversal optical mode. Under these circu...
A Short Theoretical Note on Optical Absorption of Amorphous Gallium Arsenide in the Infrared Range
Optical absorption coefficient amorphous GaAs far infrared range
2010/12/10
An approach to determine the optical absorption coefficient of amorphous GaAs in the far infrared range is developed. Results from this approach are compared with experiment and with other theoretical...