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Hole Mobility in Strained Ge and III-V P-channel Inversion Layers with Self-consistent Valence Subband Structure and High-k Insulators
Ge and III-V high-k hole mobility k.p strained p-channel valence subband structure
2014/11/7
We present a comprehensive investigation of the low-ˉeld hole mobility in strained Ge and III-V (GaAs, GaSb, InSb and In1¡xGaxAs) p-channel inversion layers with both SiO2 and high-· insulators. ...
Recent Advances in Perfectly Matched Layers in Finite Element Applications
Finite element method (FEM) perfectly matched layer (PML) locally-conformal PML
2009/7/28
We present a comparative evaluation of two novel and practical perfectly matched layer (PML) implementations to the problem of mesh truncation in the finite element method (FEM): locally-conformal PML...
My Collaboration with Raj Mittra: Contributions to the Theory of Perfectly Matched Layers
Raj Mittra Contributions Perfectly Matched Layers
2009/7/28
It is impossible to imagine a young researcher in the vast field of applied electromagnetics to not
have encountered the name of Raj Mittra during the first few months of his research activities. In ...
Characteristics of ZnO Layers Grown on GaN Template Under Argon Pressure by Pulsed Laser Deposition
ZnO Pulsed Laser Deposition Buffer layer Annealing
2009/6/1
We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were anneale...
Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Metamorphic buffer layer LP-MOCVD HEMT
2010/12/7
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented ...
Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates
MOCVD-Grown High-Quality CdTe Layers GaAs Substrates
2010/12/14
CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The...
The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions
GaAs Epitaxial Layers Ga-As-Bi Solutions
2010/12/21
X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the...
Evaluation of Inhomogeneous Resistive Layers by a Four Point Method
Inhomogeneous Resistive Layers a Four Point Method
2011/1/10
This paper describes the determination of the sheet resistance of a narrow strip located in a homogeneous resistive layer of different resistivity. The application of the method for the evaluation of ...