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Behaviour of large scale structures of the electron content as a key parameterfor range errors in GNSS applications
parameterfor GNSS
2015/9/14
The Total Electron Content (TEC) of the ionosphere is a key parameter for describing the ionospheric state. This paper deals with the large scale behaviour of TEC under low and high solar activity con...
Behaviour of Thin Film TiO2 Overlaid λ/2 Microstrip Rejection Filter Due to Ageing of the Overlay
Overlay rejection filter ageing
2010/12/9
The long term behaviour of TiO2 thin film overlaid λ/2 L-section rejection filter due to the ageing of the overlay is reported in this paper. The observations are over a period of upto 600 days with e...
Behaviour of Parallel Coupled Microstrip Band Pass Filter and Simple Microstripline Due To Thin-Film Al2O3 Overlay
Parallel Coupled Microstrip Band Pass Filter Simple Microstripline Thin-Film Al2O3 Overlay
2010/12/13
The X-band behaviour of a seven-section parallel-coupled microstrip band pass filter and microstripline due to thin-film Al2O3 overlay of different thickness is reported in this paper. This Al2O3 film...
Dependence of the Sheet Resistivity and Current Noise Behaviour of the Grain Size and Volume Fraction of Conducting Material in Thick-Film Resistors Experiments
the Grain Size Conducting Material Thick-Film Resistors Experiments
2010/12/21
Experimental results concerning the dependence of the sheet resistivity and the noise coefficient on the grain size and the volume fraction, respectively, of the metallic-like component in Bi2Ru2O7-ba...
About the Influence of SiO2 on the Temperature Behaviour of Ruthenate Based Thick Film Resistors
SiO2 the Temperature Behaviour of Ruthenate Thick Film Resistors
2010/12/21
Substituting glass by SiO2 in thick film resistors results in a small increase of R□, a decrease of dR□/dT and an increase of d2R□/dT2 (at room temperature). From these experimental results it follows...
A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
GaAs Mesfet Si NMOS ESD Behaviour
2010/12/21
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.The work to date has shown that GaAs MESFET...