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Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP
Semiconductor Bragg mirror AlGaAs/AlAsSb
2010/10/13
We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped Al...
Electrical Characterization of GaTe and GaTe:Cu Semiconductor Compounds
Electrical characterization layered semiconductors GaTe
2010/4/14
Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, ...