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Robust design of Si/Si3N4 high contrast grating mirror for mid-infrared VCSEL application
High contrast grating mirror mid-infrared VCSEL Robust design
2012/5/28
A Si/Si3N4 high contrast grating mirror has been designed for a VCSEL integration in mid-infrared ({\lambda} = 2.65 $\mu$m). The use of an optimization algorithm which maximizes a VCSEL mirror quality...
外包壳对具有氧化孔径层的圆柱形VCSEL阈值增益的影响
垂直腔面发射激光器 氧化孔径 阈值增益
2007/12/18
采用矢量场模型，对具有诱人应用前景的圆柱形垂直腔面发射半导体激光器（VCSEL）的模式阈值增益进行了数值模拟；为减弱金属圆柱的反射以使理论计算更接近实际，采用两种方案，将外加金属包壳视为非理想导体，或在此基础上，将金属包壳与激光器主体结构隔开. 从模式的阈值增益与顶Bragg反射镜层周期数的关系方面，与理想金属外包壳情况进行了比较. 结果表明，高阶贝塞耳函数模式的阈值增益变化规律基本相同，而0阶贝...
键合界面阻抗对VCSEL的电、热学特性的影响
2007/8/20
采用一电阻层来表征键合界面处的阻抗.通过求泊松方程、电流密度方程、载流子扩散方程以及有源层结压降方程自洽解的方法，计算了VCSEL的电势分布，进而求解热传导方程，得到VCSEL的温度分布.详细分析了键合界面阻抗对晶片键合结构垂直腔面发射激光器内部的电势分布、温度分布以及有源层中的注入电流密度、载流子浓度、结压降和温度沿径向分布的影响.
High-power InGaAs VCSEL’s single devices and 2-D arrays
VCSEL's 2-D arrays quantum well high power 980 nm
2011/12/15
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL’s) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 50...
Hot Electron Light emission and Lasing In Semiconductor Heterostructures (HEL-LISH-1) is a novel hot electron surface emitter consisting of a GaAs QW on the n side of an Ga1-xAlxAs p-n junction. It ut...