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Study Finds Surface Texture of Gallium Nitride Affects Cell Behavior
Surface Texture Gallium Nitride Cell
2016/11/4
This work compares the behavior of PC12 cells on planar and patterned III-nitride materials with nanostructured topographies. Three different materials’ compositions containing N-polar and Ga-polar ar...
Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications
Modeling analysis optical control gallium nitride ion dose ion energy ion range of parameters
2014/12/31
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
Study of analytical determination of parasitic resistances in Gallium Nitride (GaN) MESFET'S
Analysis model gallium nitride metal semiconductor should the transistor drainage electrical parameters of the resistance
2014/12/31
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers
metal–semiconductor–metal (MSM) UV detector
2011/5/10
A correlation of surface potential maps and photocurrent distribution images in metal–semiconductor–metal (MSM) structures allows to notice spatial nonuniformities in detector principle of operation. ...
Simulation of Millimeter-Wave Gunn Oscillations in Gallium Nitride
High field transport Millimeter-Wave Gunn Oscillations
2010/4/12
High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to mill...
Blue Light Emitting Device made of cubic phase gallium nitride
LED blue LDs GaN cubic phase GaAs
2010/7/15
A metastable cubic phase GaN blue light emitting device has been fabricated. It has
demonstrated the feasibility of growing device quality metastable cubic GaN films on GaAs
substrates. A very simpl...