搜索结果: 1-1 共查到“物理学 InAs0.9Sb0.1”相关记录1条 . 查询时间(0.062 秒)
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
InAs0.9Sb0.1 MOCVD Two-step growth method
2011/12/15
InAs0.9Sb0.1 epilayers are grown on GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD). In order to relax compressive strain caused by lattice mismatch between InAs0.9Sb0.1 and G...