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Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis
silicon nanowire mobility p-type holes atomistic bandstructure
2010/11/22
The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tightbinding model is used to calculate the N...
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators
Industrially Scalable Process Silicon Nanowires Seebeck Generators
2010/11/25
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators.